Title :
Fabrication of SOI substrates with ultra-thin Si layers
Author :
Hobart, K.D. ; Kub, F.J. ; Jernigan, G.G. ; Twigg, M.E. ; Thompson, P.E.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
6/11/1998 12:00:00 AM
Abstract :
A simple technique for the fabrication of ultra-thin silicon-on-insulator (SOI) substrates is presented. The bond-and-etch-back technique utilising an SixGe1-x etch stop has been combined with the thin film separation by hydrogen implantation approach, and SOI substrates with ultra-thin (<5 nm) Si layers have been successfully fabricated
Keywords :
elemental semiconductors; etching; ion implantation; semiconductor thin films; silicon; silicon-on-insulator; SOI substrates; Si; bond-and-etch-back technique; etch stop; ion implantation approach; thin film separation; ultra-thin semiconductor layers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980829
