Title :
Current-gain cutoff frequency comparison of InGaAs HEMTs
Author :
Hikosaka, Kohki ; Sasa, S. ; Harada, N. ; Kuroda, Shigeru
Author_Institution :
Fujitsu Lab. Ltd., Atsugi, Japan
fDate :
5/1/1988 12:00:00 AM
Abstract :
The current-gain cutoff frequency performance of pseudomorphic InGaAs/AlGaAs (20% InAs composition) high-electron-mobility transistors (HEMTs) on GaAs is compared to that of lattice-matched InGaAs/InAlAs HEMTs on InP. The current-gain cutoff frequency (f/sub t/) characteristics as a function of gate length (L/sub g/) indicate that the f/sub t/-L/sub g/ product of approximately 26 GHz- mu m in InGaAs/InAlAs HEMTs is 23% higher than that of approximately 21 GHz- mu m in InGaAs/AlGaAs HEMTs. The performance of InGaAs/AlGaAs HEMTs is also 46% higher than that of conventional GaAs/AlGaAs HEMTs ( approximately 18 GHz- mu m). These data are very useful in improving the device performance of HEMTs for a given gate length.<>
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; GaAs; HEMTs; InGaAs-AlGaAs-GaAs; InGaAs-InAlAs-InP; InP; current-gain cutoff frequency performance; gate length; high-electron-mobility transistors; Cutoff frequency; Electron mobility; Fabrication; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Temperature;
Journal_Title :
Electron Device Letters, IEEE
