Current-gain cutoff frequency comparison of InGaAs HEMTs

Author

Hikosaka, Kohki ; Sasa, S. ; Harada, N. ; Kuroda, Shigeru

Author_Institution

Fujitsu Lab. Ltd., Atsugi, Japan

Volume

9

Issue

5

fYear

1988

fDate

5/1/1988 12:00:00 AM

Firstpage

241

Lastpage

243

Abstract

The current-gain cutoff frequency performance of pseudomorphic InGaAs/AlGaAs (20% InAs composition) high-electron-mobility transistors (HEMTs) on GaAs is compared to that of lattice-matched InGaAs/InAlAs HEMTs on InP. The current-gain cutoff frequency (f/sub t/) characteristics as a function of gate length (L/sub g/) indicate that the f/sub t/-L/sub g/ product of approximately 26 GHz- mu m in InGaAs/InAlAs HEMTs is 23% higher than that of approximately 21 GHz- mu m in InGaAs/AlGaAs HEMTs. The performance of InGaAs/AlGaAs HEMTs is also 46% higher than that of conventional GaAs/AlGaAs HEMTs ( approximately 18 GHz- mu m). These data are very useful in improving the device performance of HEMTs for a given gate length.<>

Keywords

III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; GaAs; HEMTs; InGaAs-AlGaAs-GaAs; InGaAs-InAlAs-InP; InP; current-gain cutoff frequency performance; gate length; high-electron-mobility transistors; Cutoff frequency; Electron mobility; Fabrication; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.703

Filename

703