Comments on "A small-signal MOSFET model for radio frequency IC applications"

Author

Tin, Suet Fong ; Osman, Ashraf A. ; Mayaram, Kartikeya

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA, USA

Volume

17

Issue

4

fYear

1998

fDate

4/1/1998 12:00:00 AM

Firstpage

372

Lastpage

374

Abstract

For original paper see E. Abou-Allam and T. Manku, ibid., vol.16, pp.437-47 (1997). A comparison is provided between the recent small-signal analysis for the distributed gate resistance in MOSFET´s at RF frequencies and the lumped-element model of an earlier publication for various CMOS technologies. An improved lumped-element model is also proposed. It is demonstrated that simplified lumped-element circuits are adequate for modeling the effect of distributed gate resistance on both the y parameters and the thermal noise.

Keywords

CMOS integrated circuits; MOSFET; field effect MMIC; lumped parameter networks; microwave field effect transistors; semiconductor device models; semiconductor device noise; thermal noise; 5 GHz; CMOS technology; MOSFET; distributed gate resistance; lumped element model; radio frequency IC; small-signal analysis; thermal noise; y parameters; Application specific integrated circuits; CMOS technology; Capacitance; Circuit noise; Integrated circuit modeling; MOSFET circuits; Radio frequency; Radiofrequency integrated circuits; Semiconductor device modeling; Thermal resistance;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.703827

Filename

703827