DocumentCode
1406006
Title
Reduction of hot-electron-generated substrate current in sub-100-nm channel length Si MOSFET´s
Author
Shahidi, Ghavam G. ; Antoniadis, Dimitri A. ; Smith, Henry I
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA
Volume
35
Issue
12
fYear
1988
fDate
12/1/1988 12:00:00 AM
Firstpage
2430
Abstract
Channel-hot-electron-generated substrate current was measured in MOSFETs with channel lengths down to 0.09 μm, at room temperature and 77 K, and a reduction of the normalized substrate current was observed for very-short-channel devices. These devices were fabricated using X-ray lithography and had a nonuniformly doped channel. The reduction is attributed to nonlocal effects caused by the finite energy relaxation time
Keywords
hot carriers; insulated gate field effect transistors; 0.09 micron; 300 K; 77 K; MOSFETs; Si; X-ray lithography; channel length; finite energy relaxation time; hot-electron-generated substrate current; nonlocal effects; nonuniformly doped channel; very-short-channel devices; Doping; Electrodes; FETs; Glass; MOSFET circuits; Parasitic capacitance; Passivation; Thermal resistance; Transconductance; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.8835
Filename
8835
Link To Document