Title :
Evaluation of the internal quantum efficiency and saturation current of heavily doped emitters
Author_Institution :
Istituto LAMEL, Consiglio Nazionale delle Ricerche, Bologna, Italy
fDate :
4/1/1990 12:00:00 AM
Abstract :
A procedure for analytically calculating the distribution of the charge-collection probability and hence the internal quantum efficiency and saturation current of heavily doped emitters is described. The method relies on a multilayer approximation that can be treated with the transfer matrix method and holes for arbitrary dependence on the depth of the dopant concentration, minority-carrier coefficient, and lifetime, and for any value of the surface recombination velocity
Keywords :
bipolar transistors; heavily doped semiconductors; probability; semiconductor device models; carrier lifetime; charge-collection probability; dopant concentration depth; heavily doped emitters; internal quantum efficiency; minority-carrier coefficient; multilayer approximation; saturation current; surface recombination velocity; transfer matrix method; Bipolar transistors; Boundary conditions; Character generation; Equations; Nonhomogeneous media; Photovoltaic cells; Probability; Quasi-doping; Steady-state; Surface treatment;
Journal_Title :
Electron Devices, IEEE Transactions on
