Title :
Introduction To The Issue On Gan-based Lasers: Materials, Processing, And Device Issues
Author :
Miles, Richard H. ; Akasaki, Isamu
Keywords :
Diode lasers; Epitaxial growth; Epitaxial layers; Gallium nitride; Laser theory; Laser transitions; Molecular beam epitaxial growth; Optical materials; Substrates; Temperature;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.1998.704104
