DocumentCode
1406513
Title
Introduction To The Issue On Gan-based Lasers: Materials, Processing, And Device Issues
Author
Miles, Richard H. ; Akasaki, Isamu
Volume
4
Issue
3
fYear
1998
Firstpage
481
Lastpage
482
Keywords
Diode lasers; Epitaxial growth; Epitaxial layers; Gallium nitride; Laser theory; Laser transitions; Molecular beam epitaxial growth; Optical materials; Substrates; Temperature;
fLanguage
English
Journal_Title
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
1077-260X
Type
jour
DOI
10.1109/JSTQE.1998.704104
Filename
704104
Link To Document