Title :
Cleaved and etched facet nitride laser diodes
Author :
Abare, A.C. ; Mack, M.P. ; Hansen, M. ; Sink, R.K. ; Kozodoy, P. ; Keller, S. ; Speck, J.S. ; Bowers, J.E. ; Mishra, U.K. ; Coldren, L.A. ; DenBaars, S.P.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
Room-temperature (RT) pulsed operation of blue (420 nm) nitride-based multiquantum-well laser diodes grown on a-plane and c-plane sapphire substrates has been demonstrated. Structures investigated include etched and cleaved facets as well as doped and undoped quantum wells. A combination of atmospheric and low-pressure metal organic chemical vapor deposition using a modified two-flow horizontal reactor was employed. Threshold current densities as low as 12.6 kA/cm2 were observed for 10×1200 μm lasers with uncoated reactive ion etched facets on c-plane sapphire. Cleaved facet lasers were also demonstrated with similar performance on a-plane sapphire. Laser diodes tested under pulsed conditions operated up to 6 h at RT. Lasing was achieved up to 95°C and up to a 150-ns pulselength (RT). Threshold current increased with temperature with a characteristic temperature T0 of 114 K
Keywords :
Debye temperature; III-V semiconductors; gallium compounds; indium compounds; optical testing; quantum well lasers; semiconductor device testing; semiconductor growth; vapour phase epitaxial growth; 10 mum; 114 K; 1200 mum; 150 ns; 420 nm; 6 h; 95 C; InGaN; InGaN MQW laser diodes; a-plane sapphire substrates; atmospheric metal organic chemical vapor deposition; blue emiting nitride-based multiquantum-well laser diodes; c-plane sapphire substrates; characteristic temperature; cleaved facet nitride laser diodes; doped quantum wells; etched facet nitride laser diodes; laser diodes testing; low-pressure metal organic chemical vapor deposition; modified two-flow horizontal reactor; ns pulselength; pulsed conditions; room-temperature pulsed operation; threshold current; threshold current densities; uncoated reactive ion etched facets; undoped quantum wells; Chemical lasers; Chemical vapor deposition; Diode lasers; Etching; Inductors; Optical pulses; Organic chemicals; Pulsed laser deposition; Temperature; Threshold current;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.704109
