Title :
A novel material for long-wavelength lasers: InNAsP
Author :
Tu, Charles W. ; Bi, W.G. ; Ma, Y. ; Zhang, J.P. ; Wang, L.W. ; Ho, S.T.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
Abstract :
We show that a novel material InNAsP grown on InP is superior for long-wavelength microdisk lasers (and so expected for edge-emitting lasers) because of its larger conduction band offset from the addition of a small amount of nitrogen (0.5%-1%). The maximum temperature of operation for an InNAsP-GaInAsP microdisk laser is 70°C, which is about 120°C higher than that of a similar laser fabricated from GaInAs-GaInAsP. The characteristic temperature T0 of the former is 97 K, also higher than that of the latter
Keywords :
Debye temperature; III-V semiconductors; conduction bands; indium compounds; infrared sources; nitrogen compounds; optical materials; semiconductor lasers; 120 C; 70 C; 97 K; InNAsP; InNAsP long-wavelength semiconductor laser material; InNAsP-GaInAsP microdisk laser; InP; characteristic temperature; conduction band offset; edge-emitting lasers; long-wavelength microdisk lasers; maximum temperature; Bismuth; Conducting materials; Indium phosphide; Nitrogen; Optical materials; Photonic band gap; Semiconductor lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.704110
