Continuous room-temperature operation of optically pumped two-dimensional photonic crystal lasers at 1.6 μm

Author

Hwang, J.K. ; Ryu, H.Y. ; Song, D.S. ; Han, I.Y. ; Park, H.K. ; Jang, D.H. ; Lee, Y.H.

Author_Institution

Dept. of Phys., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea

Volume

12

Issue

10

fYear

2000

Firstpage

1295

Lastpage

1297

Abstract

In this letter continuous operation is realized from two-dimensional slab photonic crystal lasers at room temperature. The laser structure is prepared by wafer fusion of an InGaAsP MQW active layer with an AlAs layer that is wet oxidized into an Al₂O₃ layer subsequently. The incident threshold pump power at 0.98 μm is 9.2 mW for a /spl sim/10-μm-diameter hexagonal cavity lasing at 1.6 μm.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser cavity resonators; laser transitions; optical pumping; photonic band gap; quantum well lasers; 0.98 mum; 1.6 mum; 10 mum; 9.2 mW; Al/sub 2/O/sub 3/; Al/sub 2/O/sub 3/ layer; AlAs layer; InGaAsP; InGaAsP MQW active layer; InGaAsP active layer; continuous room-temperature operation; hexagonal cavity lasing; incident threshold pump power; laser structure; optically pumped two-dimensional photonic crystal lasers; room temperature; two-dimensional slab photonic crystal lasers; wafer fusion; wet oxidized; Crystalline materials; Laser excitation; Laser fusion; Laser modes; Lattices; Optical pumping; Photonic crystals; Pump lasers; Slabs; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.883808

Filename

883808