Title :
Orientation dependence of optical gain in zincblende-GaN strained-quantum-well lasers
Author :
Ohtoshi, T. ; Niwa, A. ; Kuroda, T.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
Optical gains in zincblende-GaN strained-quantum-well (QW) lasers are analyzed theoretically for various crystal orientations. Valence subbands are calculated based on the 6×6 Luttinger-Kohn model. It is found that the gains in zincblende-GaN strained-QW lasers with (110) orientation are much higher than those in wurtzite-GaN lasers with (0001) orientation
Keywords :
III-V semiconductors; crystal orientation; gallium compounds; laser theory; quantum well lasers; semiconductor device models; valence bands; (0001) orientation; (110) orientation; 6×6 Luttinger-Kohn model; GaN; crystal orientations; optical gain; orientation dependence; valence subbands; wurtzite-GaN lasers; zincblende-GaN strained-QW lasers; zincblende-GaN strained-quantum-well lasers; Capacitive sensors; Gallium arsenide; Gallium nitride; Laser modes; Laser theory; Optical films; Optical materials; Quantum well lasers; Semiconductor lasers; Threshold current;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.704113
