A monolithic GaInAsN vertical-cavity surface-emitting laser for the 1.3-μm regime

Author

Fischer, M. ; Reinhardt, M. ; Forchel, A.

Author_Institution

Technische Phys., Wurzburg Univ., Germany

Volume

12

Issue

10

fYear

2000

Firstpage

1313

Lastpage

1315

Abstract

An all-epitaxial GaInAsN vertical-cavity surface-emitting laser for room-temperature (RT) emission at 1.3 μm was developed by solid-source molecular beam epitaxy using a plasma source for nitrogen activation. RT photopumped operation is demonstrated at a wavelength of 1283 nm. Stimulated emission was observed up to a record high temperature of 143/spl deg/C, resulting in an emission wavelength of 1294 nm.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; infrared sources; laser transitions; molecular beam epitaxial growth; optical fabrication; optical pumping; stimulated emission; surface emitting lasers; 1.3 mum; 1283 nm; 1294 nm; 143 C; GaInAsN; all-epitaxial GaInAsN vertical-cavity surface-emitting laser; emission wavelength; monolithic GaInAsN vertical-cavity surface-emitting laser; nitrogen activation; photopumped operation; plasma source; record high temperature; room-temperature laser emission; solid-source molecular beam epitaxy; stimulated emission; Gallium arsenide; Molecular beam epitaxial growth; Nitrogen; Optical pumping; Optical refraction; Optical surface waves; Plasma temperature; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.883814

Filename

883814