High-reflectance dielectric mirrors deposited by plasma-enhanced chemical vapor deposition on GaAs-AlGaAs semiconductor lasers with inductively coupled plasma etched facets

Author

Horst, S.C. ; Hinkel, D.S. ; Fitz, J.L. ; Turk, H.

Author_Institution

Department of Defense, Fort George G. Meade, MD, USA

Volume

12

Issue

10

fYear

2000

Firstpage

1325

Lastpage

1327

Abstract

High-reflectance dielectric mirrors (HRDMs) have been deposited on the etched facets of edge-emitting semiconductor ridge lasers. Dry etching using an inductively coupled plasma system formed the laser facets. The HRDMs were deposited using plasma enhanced chemical vapor deposition. Lasers with cavity lengths of 200 and 128 μm have been tested before and after deposition of the HRDMs with a reduction in threshold of 50% and 61%, respectively. Lasing has been demonstrated in devices with cavity lengths as small as 32 μm after the addition of the HRDMs.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; laser mirrors; plasma CVD; quantum well lasers; reflectivity; ridge waveguides; waveguide lasers; 128 mum; 200 mum; 32 mum; GaAs-AlGaAs; GaAs-AlGaAs semiconductor lasers; edge-emitting semiconductor ridge lasers; high-reflectance dielectric mirrors; inductively coupled plasma etched facets; inductively coupled plasma system; laser cavity lengths; laser facets; plasma enhanced chemical vapor deposition; plasma-enhanced chemical vapor deposition; Chemical lasers; Chemical vapor deposition; Dielectrics; Etching; Mirrors; Optical coupling; Plasma applications; Plasma chemistry; Plasma devices; Semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.883818

Filename

883818