Title :
Conduction power loss in MOSFET synchronous rectifier with parallel-connected Schottky barrier diode
Author :
Yamashita, Nobuhiko ; Murakami, Naoki ; Yachi, Toshiaki
Author_Institution :
NTT Integrated Inf. & Energy Syst. Lab., Nippon Telegraph & Telephone Corp., Tokyo, Japan
fDate :
7/1/1998 12:00:00 AM
Abstract :
The conduction power loss in an MOSFET synchronous rectifier with a parallel-connected Schottky barrier diode (SBD) was investigated. It was found that the parasitic inductance between the MOSFET and SBD has a large effect on the conduction power loss. This parasitic inductance creates a current that is shared by the two devices for a certain period and increases the conduction power loss. If conventional devices are used for under 1 MHz switching, the advantage of the low on-resistance MOSFET will almost be lost. To reduce the conduction loss for 10 MHz switching, the parasitic inductance must be a subnanohenley
Keywords :
AC-DC power convertors; Schottky diodes; inductance; losses; power MOSFET; power semiconductor switches; rectifying circuits; semiconductor device models; semiconductor device testing; switching circuits; 1 MHz; 10 MHz; MOSFET synchronous rectifier; conduction power loss; current sharing; low on-resistance MOSFET; parallel-connected Schottky barrier diode; parasitic inductance; switching; Driver circuits; Inductance; MOSFET circuits; Power MOSFET; Rectifiers; Schottky barriers; Schottky diodes; Switches; Timing; Voltage;
Journal_Title :
Power Electronics, IEEE Transactions on
