• DocumentCode
    1406746
  • Title

    Avalanche photodiodes with an impact-ionization-engineered multiplication region

  • Author

    Yuan, P. ; Wang, S. ; Sun, X. ; Zheng, X.G. ; Holmes, A.L., Jr. ; Campbell, J.C.

  • Author_Institution
    Multiplex Inc., South Plainfield, NJ, USA
  • Volume
    12
  • Issue
    10
  • fYear
    2000
  • Firstpage
    1370
  • Lastpage
    1372
  • Abstract
    We demonstrate an impact-ionization-engineered structure for the multiplication region of avalanche photodiodes. By enhancing the control of the impact-ionization position, the structure achieved high gain, low dark current, and very low noise.
  • Keywords
    avalanche photodiodes; dark conductivity; impact ionisation; optical noise; avalanche photodiodes; high gain; impact-ionization position control; impact-ionization-engineered multiplication region; impact-ionization-engineered structure; low dark current; multiplication region; very low noise; Avalanche photodiodes; Bit rate; Communication system control; Dark current; Gallium arsenide; Heterojunctions; Impact ionization; Optical fiber communication; Semiconductor device noise; Sun;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.883833
  • Filename
    883833
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1406746