• DocumentCode
    1406922
  • Title

    Bulk micromachining of silicon

  • Author

    Kovacs, Gregory T A ; Maluf, Nadim I. ; Petersen, Kurt E.

  • Author_Institution
    Center for Integrated Syst., Stanford Univ., CA, USA
  • Volume
    86
  • Issue
    8
  • fYear
    1998
  • fDate
    8/1/1998 12:00:00 AM
  • Firstpage
    1536
  • Lastpage
    1551
  • Abstract
    Bulk silicon etching techniques, used to selectively remove silicon from substrates, have been broadly applied in the fabrication of micromachined sensors, actuators, and structures. Despite the more recent emergence of higher resolution, surface-micromachining approaches, the majority of currently shipping silicon sensors are made using bulk etching. Particularly in light of newly introduced dry etching methods compatible with complementary metal-oxide-semiconductors, it is unlikely that bulk micromachining will decrease in popularity in the near future. The available etching methods fall into three categories in terms of the state of the etchant: wet, vapor, and plasma. For each category, the available processes are reviewed and compared in terms of etch results, cost, complexity, process compatibility, and a number of other factors. In addition, several example micromachined structures are presented
  • Keywords
    elemental semiconductors; etching; micromachining; micromechanical devices; reviews; semiconductor technology; silicon; sputter etching; Si; bulk Si etching techniques; bulk micromachining; dry etching methods; fabrication processes; micromachined actuators; micromachined sensors; micromachined structures; plasma etching; process compatibility; vapor etching; wet etching; Actuators; Anisotropic magnetoresistance; Circuits; Costs; Fabrication; Micromachining; Plasma applications; Plasma chemistry; Silicon compounds; Wet etching;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/5.704259
  • Filename
    704259