DocumentCode
1406922
Title
Bulk micromachining of silicon
Author
Kovacs, Gregory T A ; Maluf, Nadim I. ; Petersen, Kurt E.
Author_Institution
Center for Integrated Syst., Stanford Univ., CA, USA
Volume
86
Issue
8
fYear
1998
fDate
8/1/1998 12:00:00 AM
Firstpage
1536
Lastpage
1551
Abstract
Bulk silicon etching techniques, used to selectively remove silicon from substrates, have been broadly applied in the fabrication of micromachined sensors, actuators, and structures. Despite the more recent emergence of higher resolution, surface-micromachining approaches, the majority of currently shipping silicon sensors are made using bulk etching. Particularly in light of newly introduced dry etching methods compatible with complementary metal-oxide-semiconductors, it is unlikely that bulk micromachining will decrease in popularity in the near future. The available etching methods fall into three categories in terms of the state of the etchant: wet, vapor, and plasma. For each category, the available processes are reviewed and compared in terms of etch results, cost, complexity, process compatibility, and a number of other factors. In addition, several example micromachined structures are presented
Keywords
elemental semiconductors; etching; micromachining; micromechanical devices; reviews; semiconductor technology; silicon; sputter etching; Si; bulk Si etching techniques; bulk micromachining; dry etching methods; fabrication processes; micromachined actuators; micromachined sensors; micromachined structures; plasma etching; process compatibility; vapor etching; wet etching; Actuators; Anisotropic magnetoresistance; Circuits; Costs; Fabrication; Micromachining; Plasma applications; Plasma chemistry; Silicon compounds; Wet etching;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/5.704259
Filename
704259
Link To Document