DocumentCode :
1406922
Title :
Bulk micromachining of silicon
Author :
Kovacs, Gregory T A ; Maluf, Nadim I. ; Petersen, Kurt E.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Volume :
86
Issue :
8
fYear :
1998
fDate :
8/1/1998 12:00:00 AM
Firstpage :
1536
Lastpage :
1551
Abstract :
Bulk silicon etching techniques, used to selectively remove silicon from substrates, have been broadly applied in the fabrication of micromachined sensors, actuators, and structures. Despite the more recent emergence of higher resolution, surface-micromachining approaches, the majority of currently shipping silicon sensors are made using bulk etching. Particularly in light of newly introduced dry etching methods compatible with complementary metal-oxide-semiconductors, it is unlikely that bulk micromachining will decrease in popularity in the near future. The available etching methods fall into three categories in terms of the state of the etchant: wet, vapor, and plasma. For each category, the available processes are reviewed and compared in terms of etch results, cost, complexity, process compatibility, and a number of other factors. In addition, several example micromachined structures are presented
Keywords :
elemental semiconductors; etching; micromachining; micromechanical devices; reviews; semiconductor technology; silicon; sputter etching; Si; bulk Si etching techniques; bulk micromachining; dry etching methods; fabrication processes; micromachined actuators; micromachined sensors; micromachined structures; plasma etching; process compatibility; vapor etching; wet etching; Actuators; Anisotropic magnetoresistance; Circuits; Costs; Fabrication; Micromachining; Plasma applications; Plasma chemistry; Silicon compounds; Wet etching;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/5.704259
Filename :
704259
Link To Document :
بازگشت