Monolithically integrated power MOSFET and Schottky diode with improved reverse recovery characteristics

Author

Shenai, Krishna ; Baliga, B.Jayant

Author_Institution

General Electric Corp., Schenectady, NY, USA

Volume

37

Issue

4

fYear

1990

fDate

4/1/1990 12:00:00 AM

Firstpage

1167

Lastpage

1169

Abstract

A power DMOSFET structure with a monolithically integrated Schottky diode located under the source contact pad is described. In this structure the source contact metallization step is also used to fabricate an epitaxial drift region Schottky diode in parallel with the parasitic body p-n junction diode of the power MOSFET. Such a structure results in significantly improved internal diode switching characteristics with no degradation in the on-state resistance and drain-source breakdown voltage. The integral power MOSFET technology was used to fabricate 30- and 45-V vertical power DMOSFETs with a reduction in peak reverse current and stored charge of more than 25% as compared to a conventional power DMOSFET. The Schottky diode consumed less than 15% of the active transistor area

Keywords

MOS integrated circuits; Schottky-barrier diodes; power integrated circuits; 30 V; 45 V; Schottky diode; internal diode switching characteristics; monolithic integration; power MOSFET; reverse recovery characteristics; source contact pad; vertical power DMOSFETs; Degradation; MOSFET circuits; Metallization; P-i-n diodes; P-n junctions; Power MOSFET; Power semiconductor switches; Rectifiers; Schottky diodes; Semiconductor diodes;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.52458

Filename

52458