DocumentCode
1406942
Title
High-aspect-ratio micromachining via deep X-ray lithography
Author
Guckel, H.
Author_Institution
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
Volume
86
Issue
8
fYear
1998
fDate
8/1/1998 12:00:00 AM
Firstpage
1586
Lastpage
1593
Abstract
High-aspect-ratio microsystems technology (HARMST) can be implemented by using thick photoresist technology, which requires X-ray photons for exposure. This was first realized in Germany via the so-called LIGA process. To make this process cost effective, exposures with high-energy photons were introduced in 1993 via a University of Wisconsin-Brookhaven National Laboratory cooperation. The addition of a solvent bonded resist technology and replanarization after electroplating and X-ray mask aligning yield a HARMST processing sequence that uses large-area, sequential X-ray masks without diaphragms. This technology may be applied to precision engineered parts which do not involve electronics. The processing sequence is also used for high performance linear and rotational, magnetic and electrostatic actuators. System applications in optics involve spectrometers and other devices. A discussion of US and world wide efforts in HARMST points at increasing demands for this type of processing tool
Keywords
X-ray lithography; micromachining; HARMST; LIGA process; X-ray mask; deep X-ray lithography; electroplating; electrostatic actuator; high-aspect-ratio micromachining; magnetic actuator; microelectromechanical device; optical spectrometer; photoresist; precision engineering; replanarization; solvent bonded resist; Bonding; Costs; Electrostatic actuators; Laboratories; Micromachining; Optical devices; Photonics; Resists; Solvents; X-ray lithography;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/5.704264
Filename
704264
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