• DocumentCode
    1407009
  • Title

    Influence of Passivation Layers on Characteristics of a-InGaZnO Thin-Film Transistors

  • Author

    Liu, Shou-En ; Yu, Ming-Jiue ; Lin, Chang-Yu ; Ho, Geng-Tai ; Cheng, Chun-Cheng ; Lai, Chih-Ming ; Lin, Chrong-Jung ; King, Ya-Chin ; Yeh, Yung-Hui

  • Author_Institution
    Electron. & Optoelectron. Res. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan
  • Volume
    32
  • Issue
    2
  • fYear
    2011
  • Firstpage
    161
  • Lastpage
    163
  • Abstract
    We investigated the influence of passivation-layer deposition on the characteristics of a-InGaZnO thin-film transistors (TFTs). The threshold voltage (VT) of the TFTs shifted markedly as a result of the mechanical stress induced by the passivation layers above. By adjusting the deposition parameters during the passivation process, the performance of the TFTs can be modulated. The a-InGaZnO TFTs after dual passivation exhibited good performance with a field-effect mobility of 11.35 cm2/V·s, a threshold voltage of 2.86 V, and an on-off ratio of 108.
  • Keywords
    gallium compounds; indium compounds; passivation; stress effects; ternary semiconductors; thin film transistors; InGaZnO; field-effect mobility; mechanical stress; passivation layer deposition; thin film transistors; voltage 2.86 V; Amorphous InGaZnO; passivation layer; thin-film transistor;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2091620
  • Filename
    5671465
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1407009