Integrated Complementary Resistive Switches for Passive High-Density Nanocrossbar Arrays

Author

Rosezin, R. ; Linn, E. ; Nielen, L. ; Kügeler, C. ; Bruchhaus, R. ; Waser, R.

Author_Institution

Inst. of Solid State Res. & Jara-Fundamentals for Future Inf. Technol., Jülich, Germany

Volume

32

Issue

2

fYear

2011

Firstpage

191

Lastpage

193

Abstract

Recently, the sneak-path obstacle in passive crossbar arrays has been overcome by the invention of complementary resistive switches (CRSs) consisting of two bipolar antiserially connected memristive elements. Here, we demonstrate the vertical integration of CRS cells based on Cu/SiO₂/Pt bipolar resistive switches. CRS cells were fabricated and electrically characterized, showing high resistance ratios (R_off/R_on >; 1500) and fast switching speed (<; 120 μs). The results are one step further toward the realization of high-density passive nanocrossbar-array-based gigabit memory devices.

Keywords

copper; platinum; semiconductor storage; semiconductor switches; silicon compounds; Cu; Pt; SiO₂; bipolar antiserially connected memristive elements; gigabit memory devices; integrated complementary resistive switches; passive crossbar arrays; passive high-density nanocrossbar arrays; sneak-path obstacle; Complementary resistive switch (CRS); memories; nonvolatile memory; resistive switching;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2090127

Filename

5671467