Title :
Integrated Complementary Resistive Switches for Passive High-Density Nanocrossbar Arrays
Author :
Rosezin, R. ; Linn, E. ; Nielen, L. ; Kügeler, C. ; Bruchhaus, R. ; Waser, R.
Author_Institution :
Inst. of Solid State Res. & Jara-Fundamentals for Future Inf. Technol., Jülich, Germany
Abstract :
Recently, the sneak-path obstacle in passive crossbar arrays has been overcome by the invention of complementary resistive switches (CRSs) consisting of two bipolar antiserially connected memristive elements. Here, we demonstrate the vertical integration of CRS cells based on Cu/SiO2/Pt bipolar resistive switches. CRS cells were fabricated and electrically characterized, showing high resistance ratios (Roff/Ron >; 1500) and fast switching speed (<; 120 μs). The results are one step further toward the realization of high-density passive nanocrossbar-array-based gigabit memory devices.
Keywords :
copper; platinum; semiconductor storage; semiconductor switches; silicon compounds; Cu; Pt; SiO2; bipolar antiserially connected memristive elements; gigabit memory devices; integrated complementary resistive switches; passive crossbar arrays; passive high-density nanocrossbar arrays; sneak-path obstacle; Complementary resistive switch (CRS); memories; nonvolatile memory; resistive switching;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2090127
