Title :
Enhancement-Mode N-Polar GaN MISFETs With Self-Aligned Source/Drain Regrowth
Author :
Singisetti, Uttam ; Wong, Man Hoi ; Dasgupta, Sansaptak ; Nidhi ; Swenson, Brian ; Thibeault, Brian J. ; Speck, James S. ; Mishra, Umesh K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
Abstract :
We report gate-first enhancement-mode (E-mode) N-polar GaN MISFET devices with self-aligned source/drain regions by molecular beam epitaxy regrowth and with a SiNx gate dielectric. E-mode operation at Vds = 4.0 V is demonstrated for devices with gate lengths >; 0.18 μm with a 20-nm GaN channel and a high-temperature SiNx gate dielectric. A high drain current of 0.74 A/mm was measured for an Lg = 0.62-μm device with a peak transconductance of 225 mS/mm and a positive threshold voltage of 1 V. The on resistance of the device was 2 Ω·mm. Devices show short-channel effect with decreasing gate lengths.
Keywords :
MISFET; gallium compounds; molecular beam epitaxial growth; nitrogen; GaN; N-polar MISFET device; e-mode operation; gate dielectric; gate-first enhancement-mode; molecular beam epitaxy regrowth; peak transconductance; self-aligned source/drain region; self-aligned source/drain regrowth; size 20 nm; voltage 1 V; voltage 4 V; Enhancement-mode GaN HEMT; MIS-HEMT; MISFET; N-polar GaN; self-aligned FET;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2090125
