DocumentCode
1407050
Title
Memristive and Memcapacitive Characteristics of a Au/Ti– 
-InP/InGaAs Diode
Author
Sun, Jie ; Lind, Erik ; Maximov, Ivan ; Xu, H.Q.
Author_Institution
Div. of Solid State Phys., Lund Univ., Lund, Sweden
Volume
32
Issue
2
fYear
2011
Firstpage
131
Lastpage
133
Abstract
This letter reports on room-temperature electrical measurements of a Au/Ti- HfO2-InP/InGaAs diode fabricated by atomic layer deposition and electron beam lithography. At forward bias voltages, the diode shows memristor characteristics, whereas at reverse bias voltages, the diode can be characterized as a memcapacitor. A parasitic accumulation layer of charges formed at the high- κ oxide/InP interface is shown to be the cause for the phenomena. The operation of the diode as a rewritable memory cell is also demonstrated. The results highlight novel memristive and memcapacitive properties of high-κ dielectrics on III-V semiconductors and their potential applications in nanoelectronics.
Keywords
III-V semiconductors; atomic layer deposition; electron beam lithography; gallium compounds; gold compounds; hafnium compounds; high-k dielectric thin films; indium compounds; memristors; nanoelectronics; semiconductor diodes; Au-Ti-HfO2-InP-InGaAs; III-V semiconductor; atomic layer deposition; bias voltage; diode; electron beam lithography; high- κ oxide/InP interface; high-κ dielectrics; memcapacitive characteristic; memcapacitor; memristive characteristic; memristor characteristic; nanoelectronics; parasitic accumulation layer; rewritable memory cell; room-temperature electrical measurement; High-$kappa hbox{HfO}_{2}$
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2010.2090334
Filename
5671471
Link To Document