DocumentCode
1407152
Title
Analysis of picosecond and subpicosecond MSM photodiodes with very low bias voltage
Author
Van Zeghbroeck, B.J.
Author_Institution
IBM Zurich Res. Lab., Ruschlikon
Volume
35
Issue
12
fYear
1988
fDate
12/1/1988 12:00:00 AM
Firstpage
2433
Abstract
Recently, 4.8-ps FWHM current pulses were generated with a 10-μmm×15-μ GaAs metal-semiconductor-metal photodiode at a bias voltage of only 0.5 V. To explain this surprising result a full computer simulation was carried out to determine the pulse response as a function of the applied voltage. The simulations are in good agreement with the experiment and allow quantification of the contribution of various parameters to the pulse width. They also show that the photodiode can be used as subpicosecond sampling gate, even without the occurrence of a subpicosecond recombination mechanism, owing to the short diffusion relaxation time. A method is proposed for identifying the electron and hole currents in the photodiode by comparing the pulse response with the autocorrelation signal
Keywords
III-V semiconductors; gallium arsenide; metal-semiconductor-metal structures; photodiodes; pulse generators; semiconductor device models; 0.5 V; 4.8 ps; FWHM current pulses; GaAs; autocorrelation signal; computer simulation; diffusion relaxation time; electron currents; hole currents; metal-semiconductor-metal photodiode; pulse response; subpicosecond sampling gate; very low bias voltage; Charge carrier processes; Computational modeling; Computer simulation; Gallium arsenide; Photodiodes; Pulse generation; Sampling methods; Space vector pulse width modulation; Spontaneous emission; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.8841
Filename
8841
Link To Document