• DocumentCode
    1407152
  • Title

    Analysis of picosecond and subpicosecond MSM photodiodes with very low bias voltage

  • Author

    Van Zeghbroeck, B.J.

  • Author_Institution
    IBM Zurich Res. Lab., Ruschlikon
  • Volume
    35
  • Issue
    12
  • fYear
    1988
  • fDate
    12/1/1988 12:00:00 AM
  • Firstpage
    2433
  • Abstract
    Recently, 4.8-ps FWHM current pulses were generated with a 10-μmm×15-μ GaAs metal-semiconductor-metal photodiode at a bias voltage of only 0.5 V. To explain this surprising result a full computer simulation was carried out to determine the pulse response as a function of the applied voltage. The simulations are in good agreement with the experiment and allow quantification of the contribution of various parameters to the pulse width. They also show that the photodiode can be used as subpicosecond sampling gate, even without the occurrence of a subpicosecond recombination mechanism, owing to the short diffusion relaxation time. A method is proposed for identifying the electron and hole currents in the photodiode by comparing the pulse response with the autocorrelation signal
  • Keywords
    III-V semiconductors; gallium arsenide; metal-semiconductor-metal structures; photodiodes; pulse generators; semiconductor device models; 0.5 V; 4.8 ps; FWHM current pulses; GaAs; autocorrelation signal; computer simulation; diffusion relaxation time; electron currents; hole currents; metal-semiconductor-metal photodiode; pulse response; subpicosecond sampling gate; very low bias voltage; Charge carrier processes; Computational modeling; Computer simulation; Gallium arsenide; Photodiodes; Pulse generation; Sampling methods; Space vector pulse width modulation; Spontaneous emission; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.8841
  • Filename
    8841