Title :
Optical characterization of low-temperature-grown GaAs for ultrafast all-optical switching devices
Author :
Loka, Hany S. ; Benjamin, Seldon D. ; Smith, Peter W E
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
fDate :
8/1/1998 12:00:00 AM
Abstract :
Low-temperature-grown GaAs (LT-GaAs) is a promising material for all-optical switching devices due to its outstanding optical characteristics. In this paper, we outline a simplified model we have developed to describe the dynamics of the carriers in this material. We also report the results of a series of measurements that we have performed to characterize the optical properties of the material. Specifically, we present the first measurements of the two-photon absorption coefficient and the refractive index changes as a function of the growth and annealing temperatures in LT-GaAs. Finally, we show how our model can be used to optimize the material for applications in all-optical switching
Keywords :
absorption coefficients; electro-optical switches; gallium arsenide; high-speed optical techniques; molecular beam epitaxial growth; refractive index; semiconductor growth; two-photon processes; GaAs; all-optical switching; annealing temperatures; low-temperature-grown GaAs; optical characteristics; optical characterization; optical properties; refractive index changes; two-photon absorption coefficient; ultrafast all-optical switching devices; Absorption; Annealing; Gallium arsenide; Optical devices; Optical materials; Optical refraction; Optical variables control; Performance evaluation; Refractive index; Temperature;
Journal_Title :
Quantum Electronics, IEEE Journal of
