Optical characterization of low-temperature-grown GaAs for ultrafast all-optical switching devices

Author

Loka, Hany S. ; Benjamin, Seldon D. ; Smith, Peter W E

Author_Institution

Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada

Volume

34

Issue

8

fYear

1998

fDate

8/1/1998 12:00:00 AM

Firstpage

1426

Lastpage

1437

Abstract

Low-temperature-grown GaAs (LT-GaAs) is a promising material for all-optical switching devices due to its outstanding optical characteristics. In this paper, we outline a simplified model we have developed to describe the dynamics of the carriers in this material. We also report the results of a series of measurements that we have performed to characterize the optical properties of the material. Specifically, we present the first measurements of the two-photon absorption coefficient and the refractive index changes as a function of the growth and annealing temperatures in LT-GaAs. Finally, we show how our model can be used to optimize the material for applications in all-optical switching

Keywords

absorption coefficients; electro-optical switches; gallium arsenide; high-speed optical techniques; molecular beam epitaxial growth; refractive index; semiconductor growth; two-photon processes; GaAs; all-optical switching; annealing temperatures; low-temperature-grown GaAs; optical characteristics; optical characterization; optical properties; refractive index changes; two-photon absorption coefficient; ultrafast all-optical switching devices; Absorption; Annealing; Gallium arsenide; Optical devices; Optical materials; Optical refraction; Optical variables control; Performance evaluation; Refractive index; Temperature;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.704335

Filename

704335