Third-order nonlinearity induced lateral-mode frequency locking and beam instability in the high-power operation of narrow-ridge semiconductor lasers

Author

Fu, Xiaoli ; Tan, G.L. ; Gordon, R. ; Xu, J.M.

Author_Institution

Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada

Volume

34

Issue

8

fYear

1998

fDate

8/1/1998 12:00:00 AM

Firstpage

1447

Lastpage

1454

Abstract

Lateral-mode frequency locking in the high-power operation of narrow-ridge semiconductor lasers is shown to be attributable to carrier-induced third-order nonlinearities. Not only are known experimental characteristics of beam steering explained with this theory, but new insights into the nature of beam steering, such as its inherent bistable behavior, are obtained

Keywords

laser beams; laser mode locking; laser modes; laser theory; nonlinear optics; optical bistability; ridge waveguides; semiconductor device models; semiconductor lasers; waveguide lasers; beam steering; carrier-induced third-order nonlinearities; high-power operation; inherent bistable behavior; laser beam instability; narrow-ridge semiconductor lasers; optical bistability; third-order nonlinearity induced lateral-mode laser frequency locking; Beam steering; Fiber lasers; Frequency; Laser beams; Laser mode locking; Laser modes; Laser theory; Semiconductor laser arrays; Semiconductor lasers; Waveguide lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.704339

Filename

704339