Title :
Performance of GaAs-AlGaAs V-grooved inner stripe quantum-well wire lasers with different current blocking configurations
Author :
Kim, Tae Geun ; Park, Kyung Hyun ; Hwang, Sung-Min ; Kim, Yong ; Kim, Eun Kyu ; Min, Suk-Ki ; Leem, Si-Jeong ; Jeon, Jong-Il ; Park, Jung-Ho ; Chang, William S C
Author_Institution :
Semicond. Mater. Lab., Korea Inst. of Sci. & Technol., Seoul, South Korea
fDate :
8/1/1998 12:00:00 AM
Abstract :
GaAs-AlGaAs V-grooved inner stripe (VIS) quantum-well wire (QWW) lasers grown by metalorganic chemical vapor deposition with different current blocking configurations, n-blocking on p-substrate (VIPS), p-n-p-n blocking on n-substrate (VI(PN)nS) and p-blocking on n-substrate (VINS) have been fabricated and characterized. The VIPS QWW lasers show the most stable characteristics with effective current confinement: one of the lasers shows fundamental transverse mode, lasing up to 5 mW/facet, typical threshold current of 39.9 mA at 818.5 mm, an external differential quantum efficiency of 24%/facet, and characteristic temperature of 92 K. The current tuning rate was almost linear at 0.031 mm/mA, and the temperature tuning rate was measured to be 0.14 nm/°C. Comparison of the light output versus current characteristics of the lasers with different current blocking configurations is presented here
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; laser stability; laser transitions; laser tuning; quantum well lasers; semiconductor growth; semiconductor quantum wires; vapour phase epitaxial growth; 39.9 mA; 5 mW; 818.5 nm; 92 K; GaAs-AlGaAs; GaAs-AlGaAs V-grooved inner stripe quantum-well wire lasers; characteristic temperature; current blocking configurations; current characteristics; current tuning rate; effective current confinement; external differential quantum efficiency; fundamental transverse mode; light output; metalorganic chemical vapor deposition; n-blocking substrate; n-substrate; p-n-p-n blocking; p-substrate; temperature tuning rate; typical threshold current; Chemical lasers; Chemical vapor deposition; Laser modes; Laser stability; Laser tuning; Quantum well lasers; Quantum wells; Temperature; Threshold current; Wire;
Journal_Title :
Quantum Electronics, IEEE Journal of
