DocumentCode
1407400
Title
Thermal stability of emitter ballasted HBT´s
Author
Adlerstein, Michael G.
Author_Institution
Adv. Device Center, Raytheon Electron., Andover, MA, USA
Volume
45
Issue
8
fYear
1998
fDate
8/1/1998 12:00:00 AM
Firstpage
1653
Lastpage
1655
Abstract
A simple analytical model is derived for thermoelectronic stability in heterojunction bipolar transistors (HBT´s). An expression is presented for the value of emitter ballast resistor needed to stabilize the transistor. The result leads to a stability diagram on the current-voltage (I-V) plane which aids in the selection of emitter ballast resistors
Keywords
heterojunction bipolar transistors; semiconductor device models; thermal stability; analytical model; emitter ballast resistor; heterojunction bipolar transistor; thermal stability; Analytical models; Electronic ballasts; Fingers; Gallium arsenide; Heterojunction bipolar transistors; Resistors; Stability analysis; Temperature; Thermal stability; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.704359
Filename
704359
Link To Document