Title :
Thermal stability of emitter ballasted HBT´s
Author :
Adlerstein, Michael G.
Author_Institution :
Adv. Device Center, Raytheon Electron., Andover, MA, USA
fDate :
8/1/1998 12:00:00 AM
Abstract :
A simple analytical model is derived for thermoelectronic stability in heterojunction bipolar transistors (HBT´s). An expression is presented for the value of emitter ballast resistor needed to stabilize the transistor. The result leads to a stability diagram on the current-voltage (I-V) plane which aids in the selection of emitter ballast resistors
Keywords :
heterojunction bipolar transistors; semiconductor device models; thermal stability; analytical model; emitter ballast resistor; heterojunction bipolar transistor; thermal stability; Analytical models; Electronic ballasts; Fingers; Gallium arsenide; Heterojunction bipolar transistors; Resistors; Stability analysis; Temperature; Thermal stability; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
