Title :
Generation-recombination transient effects in partially depleted SOI transistors: systematic experiments and simulations
Author :
Munteanu, Daniela ; Weiser, Douglas A. ; Cristoloveanu, Sorin ; Faynot, Olivier ; Pelloie, Jean-Luc ; Fossum, Jerry G.
Author_Institution :
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
fDate :
8/1/1998 12:00:00 AM
Abstract :
A synthesis of the most frequent transient phenomena due to floating-body effects in partially depleted SOI MOSFET´s is presented. The dominant physical mechanisms are examined through a variety of experiments. Comprehensive models which predict the transient effects are included in SOISPICE. Simulated transients involving both generation and recombination are fully validated by the experiments and are shown to he useful for reliable carrier lifetime extraction as well as SOI circuit simulation
Keywords :
MOSFET; SPICE; carrier lifetime; electron-hole recombination; semiconductor device models; silicon-on-insulator; transient analysis; MOSFET; SOISPICE; Si; carrier lifetime extraction; floating-body effects; generation-recombination transient effects; most frequent transient phenomena; partially depleted SOI transistors; physical mechanisms; simulated transients; transient effects; Analog circuits; Charge carrier lifetime; Circuit optimization; Circuit simulation; Helium; Isolation technology; MOSFET circuits; Predictive models; Semiconductor films; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
