Title :
Infrared observation of gate turn-off thyristor segment parameter nonuniformity
Author :
Hatle, M. ; Vobecky, J.
Author_Institution :
Dept. of Microelectron., Czechoslovak Tech. Univ. of Prague, Czechoslovakia
fDate :
4/1/1990 12:00:00 AM
Abstract :
A detection system for measuring the spatial distribution of recombination radiation intensity was used to determine individual gate-turn-off (GTO) thyristor cathode segment parameter nonuniformity. The radiation intensity distribution of the segments is shown to correlate with their steady-state forward voltage drops. The method can significantly simplify and speed up the basic diagnosis of a high-power GTO under a state closely approximating actual operating conditions
Keywords :
electron-hole recombination; infrared detectors; semiconductor device testing; thyristors; cathode segment parameter nonuniformity; detection system; device diagnostics; gate turn-off thyristor; high-power GTO; infrared observation; recombination radiation intensity; spatial distribution; steady-state forward voltage drops; Cathodes; Electron devices; Infrared detectors; MOSFET circuits; Power MOSFET; Power measurement; Schottky barriers; Schottky diodes; Semiconductor optical amplifiers; Thyristors;
Journal_Title :
Electron Devices, IEEE Transactions on
