Title :
Effects of transverse doping variations on the transient response of silicon avalanche shaper devices
Author :
Jalali, Hamid ; Joshi, Ravindra P. ; Gaudet, John A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Old Dominion Univ., Norfolk, VA, USA
fDate :
8/1/1998 12:00:00 AM
Abstract :
Two-dimensional (2-D) drift-diffusion simulations were performed to study the transient response of silicon avalanche shaper (SAS) devices that are used in high-power switching and pulse sharpening applications. The role of transverse doping variations on the transient device response has been studied. Our results clearly reveal a potential for filamentary current conduction. The filamentation, however, is shown to be strongly dependent on the transverse doping characteristics, and hence in principle, could he tailored
Keywords :
avalanche breakdown; elemental semiconductors; power semiconductor switches; semiconductor device models; semiconductor doping; silicon; transient response; Si; filamentary current conduction; high-power switching; pulse sharpening; silicon avalanche shaper device; transient response; transverse doping; two-dimensional drift-diffusion simulation; Circuits; DC generators; Optical pulse generation; Optical switches; Power semiconductor switches; Semiconductor device doping; Silicon; Synthetic aperture sonar; Transient response; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
