Title :
Breakdown behavior of low-power pseudomorphic AlGaAs/InGaAs 2-D MESFET´s
Author :
Hurt, M.J. ; Meneghesso, G. ; Zanoni, E. ; Peatman, W.C.B. ; Tsai, R. ; Shur, M.S.
Author_Institution :
Adv. Device Technol. Inc., Charlottesville, VA, USA
fDate :
8/1/1998 12:00:00 AM
Abstract :
We report the breakdown behavior of the two-dimensional (2-D) MESFET, which is a low-power heterodimensional transistor having dual side gates that contact the edge of the two-dimensional electron gas (2-DEG) channel in a double-side planar-doped pseudomorphic Al0.24 Ga0.76As/In0.17Ga0.83As material structure. Low output conductance (less than 6 mS/mm for VGS=0 V) and low gate leakage current (less than 100 nA) are measured out to a drain-source bias of 20 V, indicating that the effects of impact ionization are reduced in the 2-D MESFET. Excellent off-state drain-source and drain-gate breakdown voltages are experimentally measured to be 20 and 21 V, respectively. We attribute these high breakdown values to the electric and geometric properties of the heterodimensional Schottky metal/2-DEG junction
Keywords :
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; electric breakdown; gallium arsenide; impact ionisation; indium compounds; leakage currents; two-dimensional electron gas; 100 nA; 20 V; 21 V; 2DEG channel; 6 mS/mm; Al0.24Ga0.76As-In0.17Ga0.83 As; breakdown behavior; double-side planar-doped pseudomorphic structure; drain-gate breakdown voltage; drain-source breakdown voltage; dual side gates; electric properties; gate leakage current; geometric properties; heterodimensional Schottky metal/2DEG junction; impact ionization reduction; low-power pseudomorphic 2D MESFET; output conductance; two-dimensional electron gas channel; Breakdown voltage; Conducting materials; Electric breakdown; Etching; Gallium arsenide; Impact ionization; Indium gallium arsenide; Leakage current; MESFETs; Two dimensional displays;
Journal_Title :
Electron Devices, IEEE Transactions on
