DocumentCode
1407587
Title
A simple method for the thermal resistance measurement of AlGaAs/GaAs heterojunction bipolar transistors
Author
Bovolon, N. ; Baureis, P. ; Müller, J.E. ; Zwicknagl, P. ; Schultheis, R. ; Zanoni, E.
Author_Institution
Dept. of Electron. Eng., Padova Univ., Italy
Volume
45
Issue
8
fYear
1998
fDate
8/1/1998 12:00:00 AM
Firstpage
1846
Lastpage
1848
Abstract
A novel electrical method to accurately measure the thermal resistance of heterojunction bipolar transistors (HBT´s) is presented. The key advantage of the method is its simplicity, because it requires only the measurement of the device DC output characteristics at two different temperatures. In this brief, the measurement technique is illustrated, applied to multifinger HBT´s and compared with other methods
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; thermal resistance measurement; AlGaAs-GaAs; AlGaAs/GaAs heterojunction bipolar transistor; electrical method; multifinger HBT; thermal resistance measurement; Electrical resistance measurement; Gallium arsenide; Heterojunction bipolar transistors; Pulse amplifiers; Pulse measurements; Research and development; Temperature dependence; Temperature distribution; Thermal resistance; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.704388
Filename
704388
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