Title :
Monolithically integrated InGaAs PIN-InP JFET amplifier with high sensitivity
Author :
Kim, Sun Ja ; Guth, G. ; Vella-Coleiro, G.P. ; Seabury, C.W.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ
fDate :
12/1/1988 12:00:00 AM
Abstract :
Results on a p-i-n diode (PIN)-FET amplifier fabricated with high-performance fully ion-implanted InP JFETs are presented. An undoped InGaAs absorption layer and an Fe-doped semi-insulating InP layer are grown on an n+InP substrate. A Zn diffusion using evaporated Zn3P2 and ion implantation are performed on the top layer to form the PIN and FETs, respectively. The fully ion-implanted InP JFET has a transconductance over 100 mS/mm at V gs=0 with a 3-dB cutoff frequency of about 9 GHz. A complete preamplifier is implemented, consisting of gain and level-shifting buffer stages with an open-loop voltage gain of 5.5. The amplifier uses a novel symmetrical design in which the DC offset is zero at the output. A receiver sensitivity of -36.4 dBm is measured from the integrated PIN-JFET amplifier for 200 Mb/s NRZ (nonreturn-to-zero) optical signals (1.3-μm wavelength) at 1×10-9 bit error rate. To the authors´ knowledge, this is the best sensitivity reported for a PIN-FET device designed for the 1.3-1.55 μm wavelength region
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; junction gate field effect transistors; optical communication equipment; p-i-n diodes; preamplifiers; 1.3 to 1.55 micron; 100 mS; 200 Mbit/s; 9 GHz; DC offset; InGaAs-InP; InP substrate; PIN-JFET monolithically integrated amplifier; Zn diffusion; Zn3P2; cutoff frequency; high sensitivity; ion implantation; open-loop voltage gain; optical signals; p-i-n diode; preamplifier; receiver sensitivity; transconductance; Absorption; FETs; Indium gallium arsenide; Indium phosphide; Ion implantation; Optical amplifiers; Optical buffering; Optical receivers; P-i-n diodes; Zinc;
Journal_Title :
Electron Devices, IEEE Transactions on
