Accurate extraction of reverse leakage current components of shallow silicided p+-n junction for quarter- and sub-quarter-micron MOSFET´s

A real, peripheral and corner leakage current densities are extracted from measured data of area, perimeter and corner intensive p ⁺-n junctions fabricated with the quarter-micron CMOS technology using shallow trench isolation and titanium salicide. It is shown that the magnitude of corner leakage component is more than two orders of magnitude larger than those of areal and peripheral leakage components in silicided p⁺-n junctions at all temperature. The corner leakage component will be more and more important as the active area gets smaller in sub-quarter-micron devices