Title :
Injection currents analysis of p+/n-buffer junction
Author_Institution :
Sch. of Electr. & Electron. Eng., Ajou Univ., Suwon, South Korea
fDate :
8/1/1998 12:00:00 AM
Abstract :
Injection currents analysis of p+/n buffer junction is presented, taking into account the variation of the carrier lifetime with injection level which allows a unified interpretation of the junction current for all injection levels. The injected carrier density and injection efficiency of the anode are calculated as a function of the current density with the low level lifetime as a parameter for different doping levels of the buffer layer. The analytical results agree well with simulations
Keywords :
carrier density; carrier lifetime; current density; doping profiles; p-n junctions; power semiconductor devices; thyristors; anode injected carrier density; anode injection efficiency; buffer layer doping levels; carrier lifetime; current density; injection currents analysis; injection level; junction current; p+/n-buffer junction; CMOS technology; Data mining; Diodes; Leakage current; Photonic band gap; Silicidation; Silicides; Silicon; Temperature dependence; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
