• DocumentCode
    1407606
  • Title

    Reevaluation of the ftBVceo limit on Si bipolar transistors

  • Author

    Ng, Kwok K. ; Frei, Michel R. ; King, Clifford A.

  • Author_Institution
    Lucent Technol., Bell Labs., Murray Hill, NJ, USA
  • Volume
    45
  • Issue
    8
  • fYear
    1998
  • fDate
    8/1/1998 12:00:00 AM
  • Firstpage
    1854
  • Lastpage
    1855
  • Abstract
    The Johnson limit predicts that due to fundamental material limitations, the ftBVceo product for Si bipolar transistors cannot exceed 200 GHz-V. Since this limit ignores many practical components, it should not be achievable experimentally. In light of the fact that results reaching this limit have been reported, we have reevaluated such fundamental limits, and have found that this number should be much higher
  • Keywords
    bipolar transistors; electric breakdown; elemental semiconductors; silicon; Johnson limit; Si bipolar transistors; breakdown voltage; cutoff frequency; ftBVceo product; Bipolar transistors; Breakdown voltage; Cutoff frequency; Diodes; Electric breakdown; Electrons; Equations; Feedback; Heterojunctions; Region 6;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.704393
  • Filename
    704393
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1407606