Title :
A new characterization method for hot-carrier degradation in DMOS transistors
Author :
Pieracci, A. ; Riccò, B.
Author_Institution :
Dept. of Electron., Bologna Univ., Italy
fDate :
8/1/1998 12:00:00 AM
Abstract :
This paper presents an original method based on capacitance measurements, that is able to localize and estimate hot-electron-induced oxide charge in double-diffused MOS (DMOS) transistors. The method is validated by means of two-dimensional (2-D) numerical simulation. Preliminary results obtained with state-of-the-art devices are presented as example of application
Keywords :
capacitance measurement; electric charge; hot carriers; power MOSFET; semiconductor device testing; 2D numerical simulation; DMOS transistors; capacitance measurements; characterization method; double-diffused MOS transistors; hot-carrier degradation; hot-electron-induced oxide charge; BiCMOS integrated circuits; Bipolar transistors; Breakdown voltage; Capacitance measurement; Degradation; Electric breakdown; Frequency; Hot carriers; Integrated circuit modeling; MOSFETs;
Journal_Title :
Electron Devices, IEEE Transactions on
