Title :
Improved reliability of NO-nitrided SiO2 grown on p-type 4H-SiC
Author :
Li, Hui-feng ; Dimitrijev, Sima ; Harrison, H.Barry
Author_Institution :
Sch. of Microelectron. Eng., Griffith Univ., Brisbane, Qld., Australia
Abstract :
This letter demonstrates that the reliability of oxides grown on p-type 4H-SiC can be dramatically improved by NO nitridation. High field (-8 Mv/cm) room-temperature stressing and high-temperature negative-bias (250/spl deg/C, -4 MV/cm) testing were used to investigate the reliability of NO nitrided oxides. Relatively small changes in the flat-band voltage, interface-trap density and leakage current were observed after 5000 s in the case of NO nitrided oxides, while shorter stressing shifted these parameters dramatically in the case of N annealed control samples.
Keywords :
MOS capacitors; nitridation; oxidation; semiconductor materials; silicon compounds; 250 C; NO; NO nitridation; SiC-SiO/sub 2/; SiO/sub 2/ oxide growth; flat-band voltage; high field room-temperature stressing; high-temperature negative-bias testing; interface trap density; leakage current; p-type 4H-SiC; reliability; Annealing; Furnaces; Hafnium; MOS capacitors; Oxidation; Silicon carbide; Stress control; Temperature; Testing; Voltage;
Journal_Title :
Electron Device Letters, IEEE
