Title :
Micromachined planar spiral inductor in standard GaAs HEMT MMIC technology
Author :
Ribas, R.P. ; Lescot, J. ; Leclercq, J.L. ; Bennouri, N. ; Karam, J.M. ; Courtois, B.
Author_Institution :
TIMA lab., Grenoble, France
Abstract :
A novel free-standing planar spiral inductor with reduced parasitic capacitances is proposed by suspending individually the strips, through a maskless front-side bulk micromachining compatible with a commercial GaAs HEMT monolithic microwave integrated circuit (MMIC) technology. Suspended structures have been fabricated and characterized at frequencies up to 15 GHz, showing quality factors of up to 16 and self-resonant frequency superior to 16 GHz for a 4.8 nH inductor. Moreover, since the standard IC process as well as the unconcerned electronic circuits are not influenced by micromachining, such devices are directly useful to enhance RF circuits, like matching networks, filters, and low-noise amplifiers.
Keywords :
HEMT integrated circuits; III-V semiconductors; Q-factor; field effect MMIC; gallium arsenide; inductors; integrated circuit technology; micromachining; 15 GHz; GaAs; GaAs HEMT MMIC technology; RF circuit; micromachining; parasitic capacitance; planar spiral inductor; quality factor; self-resonant frequency; suspended structure; Frequency; Gallium arsenide; HEMTs; Inductors; MMICs; Micromachining; Microwave integrated circuits; Monolithic integrated circuits; Parasitic capacitance; Spirals;
Journal_Title :
Electron Device Letters, IEEE
