DocumentCode
1407662
Title
Improved High Efficiency Stacked Microstructured Neutron Detectors Backfilled With Nanoparticle
LiF
Author
Bellinger, S.L. ; Fronk, R.G. ; McNeil, W.J. ; Sobering, T.J. ; McGregor, D.S.
Author_Institution
SMART Lab., Kansas State Univ., Manhattan, KS, USA
Volume
59
Issue
1
fYear
2012
Firstpage
167
Lastpage
173
Abstract
Silicon diodes with large aspect ratio trenched microstructures, backfilled with 6LiF, show a dramatic increase in thermal neutron detection efficiency beyond that of conventional thin-film coated planar devices. Described in this work are advancements in the technology using detector stacking methods to increase thermal neutron detection efficiency, along with the current process to backfill 6LiF into the silicon microstructures. The highest detection efficiency realized thus far is over 42% intrinsic thermal neutron detection efficiency by device-stacking methods. The detectors operate as conformally diffused pn junction diodes each having 1 cm2 area. Two individual devices were mounted back-to-back with counting electronics coupling the detectors together into a single dual-detector device. The solid-state silicon device was operated at 3 V and utilized simple signal amplification and counting electronic components that have been adjusted from previous work for slow charge integration time. The intrinsic detection efficiency for normal-incident 0.0253 eV neutrons was found by calibrating against a 3He proportional counter.
Keywords
calibration; crystal microstructure; helium-3 counters; nanoparticles; neutron detection; nuclear electronics; p-n junctions; silicon radiation detectors; thin films; 3He proportional counter; aspect ratio; calibration method; electronic component analysis; high efficiency stacked microstructured neutron detector; intrinsic detection efficiency; nanoparticle 6LiF; pn junction diodes; signal amplification analysis; silicon diodes; silicon microstructure; single dual-detector device; solid-state silicon device; thermal neutron detection efficiency; thin-film coated planar devices; voltage 3 V; Detectors; Electron tubes; Microstructure; Neutrons; Powders; Silicon; Neutron detector; semiconductor radiation detectors; silicon radiation detectors;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2011.2175749
Filename
6112191
Link To Document