Title :
Transient analysis of collector current collapse in multifinger HBT´s
Author :
Dhondt, F. ; Barrette, J. ; Rolland, P.A.
Author_Institution :
IEM, Villeneuve, France
fDate :
8/1/1998 12:00:00 AM
Abstract :
The authors report for the first time a time-domain analysis of thermal instability in multifinger heterojunction bipolar transistors (HBT´s). This is based on a transient quasi-three-dimensional (3-D) electrothermal model that selfconsistently solves the thermal and electrical equations. This model is designed to evaluate the thermal time constant of GaAs-based power HBT´s employing emitter thermal shunt and emitter ballast resistance
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device models; time-domain analysis; transient analysis; GaAs; GaAs power HBT; collector current collapse; emitter ballast resistance; emitter thermal shunt; heterojunction bipolar transistor; multifinger HBT; quasi-three-dimensional electrothermal model; thermal instability; thermal time constant; time-domain analysis; transient analysis; Current density; Electric resistance; Electronic ballasts; Electrothermal effects; Equations; Heterojunction bipolar transistors; Temperature distribution; Thermal conductivity; Thermal resistance; Transient analysis;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
