Title :
Theoretical and experimental studies of monolithically integrated pseudomorphic InGaAs/AlGaAs MODFET-APD photoreceivers
Author :
Zebda, Y. ; Lipa, R. ; Tutt, M. ; Pavlidis, Dimitris ; Bhattacharya, P.K. ; Pamulapati, J. ; Oh, J.E.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI
fDate :
12/1/1988 12:00:00 AM
Abstract :
A detailed theoretical analysis has been made of the frequency response and noise performance of the integrated device, taking account of the material characteristics of the pseudomorphic InGaAs/AlGaAs heterostructure and GaAs/AlGaAs multi-quantum-well (MQW) avalanche photodiode (APD). The effects of adding an inductor between the output on the detector and the input of the transistor and the effects of a feedback resistance on the noise, speed, and gain characteristics have been investigated. The authors have fabricated and measured the performance characteristics of a monolithic device consisting of an InGaAs/AlGaAs pseudomorphic single-quantum-well MODFET with 1-μm gate length and a 30 μm×50 μm APD with a 13-period GaAs/AlGaAs (400/400 Å) avalanching region on top of it and isolated from the FET by an AlGaAs layer. The devices were coupled with monolithic resistors and inductors and with air-bridge technology. The entire structure was grown on GaAs substrates by MBE (molecular-beam epitaxy) and is believed to be the first demonstration of a pseudomorphic and MQW integrated device. The measured characteristics of the device are reported
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; integrated optoelectronics; optical communication equipment; receivers; 1 micron; GaAs substrates; GaAs-AlGaAs avalanching region; InGaAs-AlGaAs; MBE; MODFET-APD photoreceivers; MQW avalanche photodiode; air-bridge technology; feedback resistance; frequency response; gain characteristics; gate length; monolithic integration; monolithic resistors; noise performance; Avalanche photodiodes; Detectors; Frequency response; Gallium arsenide; Indium gallium arsenide; Inductors; Molecular beam epitaxial growth; Output feedback; Performance analysis; Quantum well devices;
Journal_Title :
Electron Devices, IEEE Transactions on
