Title :
Experimental verification of the physics and structure of the bipolar junction transistor
Author :
Mártil, I. ; Martín, J.M. ; García, S. ; González-Díaz, G.
Author_Institution :
Dept. Electricidad y Electronica, Univ. Complutense de Madrid, Spain
fDate :
8/1/1998 12:00:00 AM
Abstract :
The authors present an electrical characterization of discrete bipolar junction transistor (BJT) devices, with nonuniform doped emitter and base zones. The measurement of the I-V and C-V characteristics of the emitter-base and the collector-base junctions and the common emitter current gain allows to determine relevant parameters of the device. These are the built-in voltage of both junctions, the impurity gradient profiles, the electrical area of both junctions, the base and the emitter Gummel numbers and the collector doping. The whole experiment can be conducted in a laboratory session of 3-4 hour length and it is specifically addressed to students taking lectures in semiconductor device physics. The results obtained give a deep insight into both the physical structure and the physical processes involved in the transistor behavior
Keywords :
bipolar transistors; electronic engineering education; p-n junctions; semiconductor device testing; student experiments; 3 to 4 h; C-V characteristics; Gummel numbers; I-V characteristics; base zone; bipolar junction transistor; collector doping; collector-base junctions; common emitter current gain; electronic engineering; emitter zone; emitter-base junctions; laboratory session; performance measurements; physical processes; physical structure; semiconductor device physics students; transistor behavior; Capacitance-voltage characteristics; Current measurement; Doping profiles; Gain measurement; Laboratories; Physics; Semiconductor device doping; Semiconductor devices; Semiconductor impurities; Voltage;
Journal_Title :
Education, IEEE Transactions on
