DocumentCode :
1407830
Title :
A 2.6 nW, 0.45 V Temperature-Compensated Subthreshold CMOS Voltage Reference
Author :
Magnelli, Luca ; Crupi, Felice ; Corsonello, Pasquale ; Pace, Calogero ; Iannaccone, Giuseppe
Author_Institution :
Dipt. di Elettron., Inf. e Sist., Univ. della Calabria, Rende, Italy
Volume :
46
Issue :
2
fYear :
2011
Firstpage :
465
Lastpage :
474
Abstract :
A voltage reference circuit operating with all transistors biased in weak inversion, providing a mean reference voltage of 257.5 mV, has been fabricated in 0.18 m CMOS technology. The reference voltage can be approximated by the difference of transistor threshold voltages at room temperature. Accurate subthreshold design allows the circuit to work at room temperature with supply voltages down to 0.45 V and an average current consumption of 5.8 nA. Measurements performed over a set of 40 samples showed an average temperature coefficient of 165 ppm/ C with a standard deviation of 100 ppm/ C, in a temperature range from 0 to 125°C. The mean line sensitivity is ≈0.44%/V, for supply voltages ranging from 0.45 to 1.8 V. The power supply rejection ratio measured at 30 Hz and simulated at 10 MHz is lower than -40 dB and -12 dB, respectively. The active area of the circuit is ≈0.043mm2.
Keywords :
CMOS analogue integrated circuits; reference circuits; current 5.8 nA; frequency 10 MHz; frequency 30 Hz; mean line sensitivity; power 2.6 nW; power supply rejection ratio; size 0.18 micron; temperature 0 C to 125 C; temperature-compensated subthreshold CMOS; transistor threshold voltage; voltage 0.45 V; voltage 0.45 V to 1.8 V; voltage 257.5 V; voltage reference circuit; CMOS analog design; Voltage reference; subthreshold circuit; temperature compensation; ultra-low power;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2010.2092997
Filename :
5672374
Link To Document :
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