Emission gated device issues

Author

Zaidman, Ernest G. ; Kodis, Mary A.

Author_Institution

US Naval Res. Lab., Washington, DC, USA

Volume

38

Issue

10

fYear

1991

fDate

10/1/1991 12:00:00 AM

Firstpage

2221

Lastpage

2228

Abstract

A review of linear and nonlinear analyses applicable to emission gated devices is provided with an explicit declaration of the physical assumptions for each model. The authors consider density gating, not velocity modulation, emphasizing high-power and high-efficiency applications. Increased efficiency through the use of density gating for the RF input bunching of an electron beam is expected. The authors review the basic dynamics of bunch formation and describe the gating technologies currently available for the production of a prebunched beam. Considerable insight into the basic physics of emission gating, such as beam dynamics and frequency spectra, is obtainable from numerical modeling. Some unresolved issues are presented for investigation

Keywords

electron-wave tubes; microwave tubes; modelling; ultra-high-frequency tubes; RF input bunching; UHF tubes; beam dynamics; bunch formation; density gating; electron beam; emission gated devices; frequency spectra; gating technologies; high-efficiency applications; high-power; linear analysis; nonlinear analyses; numerical modeling; prebunched beam; Acceleration; Cathodes; Electron beams; Numerical models; Packaging; Particle beams; Physics; Production; Radio frequency; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.88502

Filename

88502