A fully integrated 1.9-GHz CMOS low-noise amplifier

Author

Cheon Soo Kim ; Min Park ; Chung-Hwan Kim ; Yeong Cheol Hyeon ; Hyun Kyu Yu ; Kwyro Lee ; Kee Soo Nam

Author_Institution

Compound Semicond. Dept., Electron. & Telecommun. Res. Inst., Daejeon, South Korea

Volume

8

Issue

8

fYear

1998

Firstpage

293

Lastpage

295

Abstract

A fully integrated 1.9 GHz CMOS low-noise amplifer (LNA) has been implemented in a 0.8 μm CMOS technology. For low-noise performance, the amplifier employs high-quality spiral inductors with a duality factor of 8.5-12.5, and device layout and bias condition of the active devices were optimized for low-noise conditions. This amplifier showed a noise figure of 2.8 dB with a forward gain of 15 dB at current consumption of 15 mA. To the authors´ knowledge, this represents the lowest noise figure reported to date for a fully integrated CMOS LNA operating at 1.9 GHz.

Keywords

CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; integrated circuit noise; 0.8 micron; 1.9 GHz; 15 dB; 15 mA; 2.8 dB; CMOS low-noise amplifier; Si; UHF LNA; bias condition; fully integrated CMOS LNA; low-noise performance; spiral inductors; Active inductors; Active noise reduction; CMOS technology; Circuits; Low-noise amplifiers; Noise figure; Q factor; Radio frequency; Semiconductor device noise; Spirals;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.704599

Filename

704599