Title :
Extrinsic Base Surface Passivation in Terahertz GaAsSb/InP DHBTs Using InGaAsP Ledge Structures
Author :
Liu, H.G. ; Chang, H.D. ; Sun, B.
Author_Institution :
Microwave Devices & Integrated Circuits Dept., Chinese Acad. of Sci., Beijing, China
Abstract :
Type-II GaAsSb/InP double heterojunction bipolar transistors (DHBTs) with a novel InGaAsP ledge structure were studied utilizing a 2-D hydrodynamic physical device model for the first time. The proposed ultrathin InGaAsP ledge design provides a simple and effective approach to suppress the emitter size effect and enables nanoscale GaAsSb/InP DHBTs to further increase the operating frequencies and integration levels for submillimeter-wave applications.
Keywords :
III-V semiconductors; gallium compounds; heterojunction bipolar transistors; indium compounds; passivation; semiconductor device models; 2D hydrodynamic physical device model; GaAsSb-InP; InGaAsP; double heterojunction bipolar transistors; extrinsic base surface passivation; ledge structures; submillimeter-wave applications; terahertz DHBT; Double heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Junctions; Microelectronics; Surface treatment; GaAsSb; InP; heterojunction bipolar transistors (HBTs); ledge structure; simulation; surface passivation;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2010.2093030
