Extrinsic Base Surface Passivation in Terahertz GaAsSb/InP DHBTs Using InGaAsP Ledge Structures

Author

Liu, H.G. ; Chang, H.D. ; Sun, B.

Author_Institution

Microwave Devices & Integrated Circuits Dept., Chinese Acad. of Sci., Beijing, China

Volume

58

Issue

2

fYear

2011

Firstpage

576

Lastpage

578

Abstract

Type-II GaAsSb/InP double heterojunction bipolar transistors (DHBTs) with a novel InGaAsP ledge structure were studied utilizing a 2-D hydrodynamic physical device model for the first time. The proposed ultrathin InGaAsP ledge design provides a simple and effective approach to suppress the emitter size effect and enables nanoscale GaAsSb/InP DHBTs to further increase the operating frequencies and integration levels for submillimeter-wave applications.

Keywords

III-V semiconductors; gallium compounds; heterojunction bipolar transistors; indium compounds; passivation; semiconductor device models; 2D hydrodynamic physical device model; GaAsSb-InP; InGaAsP; double heterojunction bipolar transistors; extrinsic base surface passivation; ledge structures; submillimeter-wave applications; terahertz DHBT; Double heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Junctions; Microelectronics; Surface treatment; GaAsSb; InP; heterojunction bipolar transistors (HBTs); ledge structure; simulation; surface passivation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2010.2093030

Filename

5672400