Title :
Atomically sharp silicon and metal field emitters
Author :
Marcus, R.B. ; Ravi, T.S. ; Gmitter, T. ; Busta, H.H. ; Niccum, J.T. ; Chin, K.K. ; Liu, D.
Author_Institution :
Bellcore, Red Bank, NJ, USA
fDate :
10/1/1991 12:00:00 AM
Abstract :
A method is described for forming atomically sharp silicon tips of less than 10-15° half-angle by utilizing a known oxidation inhibition at regions of high curvature; equally sharp silicon wedges are now made in a similar fashion. The sharp silicon tips serve as the starting point for forming sharp tips of W, β-W and gold. Field emission data from silicon emitters are compared with Fowler-Nordheim modelling and emission as a function of emitter-anode distance is described
Keywords :
cathodes; electron field emission; elemental semiconductors; oxidation; silicon; vacuum microelectronics; Fowler-Nordheim modelling; Si field emitters; Si-Au; Si-W; atomically sharp tips; emitter-anode distance; metal field emitters; oxidation inhibition; Electron guns; Etching; Gold; Micromagnetics; Oxidation; Probes; Silicon; Tungsten; Tunneling; Vacuum technology;
Journal_Title :
Electron Devices, IEEE Transactions on
