Waveguiding in vertical cavity quantum-well structure defined by ion implantation

Author

Li, Alex T H ; Chan, Chun-Chung ; Li, E. Herbert

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong

Volume

16

Issue

8

fYear

1998

fDate

8/1/1998 12:00:00 AM

Firstpage

1498

Lastpage

1508

Abstract

A theoretical model is presented for investigating AlGaAs-GaAs quantum-well (QW) vertical cavity waveguides defined by impurity-induced disordering. This model is based on a two-dimensional (2-D) description of the implantation profile to produce quantum-well intermixing. The modal propagation constant, power, and field evolution along the nonuniform circular waveguide is analyzed in terms of the coupled-mode equation. The influence of varying the mask dimension and length of cavity on the fundamental mode operation is studied. In a long cavity, guided mode can be supported by using higher implantation energy, however, a larger mask diameter should be used to maintain strong guiding. Result shows that optical lateral confinement is accomplished, with more than 70% of the power gathered in the cavity. The fraction of power confined in the waveguide is shown to improve by 30% after annealing. In addition, waveguide loss is estimated to be less than 40 cm^-1 which results in less than 1 dB for our structure

Keywords

III-V semiconductors; aluminium compounds; coupled mode analysis; gallium arsenide; ion implantation; masks; optical losses; optical resonators; optical waveguide theory; optical waveguides; semiconductor device models; semiconductor quantum wells; 2D description; AlGaAs-GaAs; AlGaAs-GaAs QW vertical cavity waveguides; coupled-mode equation; field evolution; fundamental mode operation; guided mode; higher implantation energy; implantation profile; impurity-induced disordering; larger mask diameter; long cavity; mask dimension; modal propagation constant; nonuniform circular waveguide; optical lateral confinement; quantum-well intermixing; strong guiding; theoretical model; vertical cavity quantum-well structure; waveguide loss; Annealing; Ion implantation; Optical refraction; Optical variables control; Optical waveguide theory; Optical waveguides; Quantum well devices; Quantum well lasers; Quantum wells; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.704616

Filename

704616