DocumentCode
1408184
Title
A high-swing MOS cascode bias circuit
Author
Vincence, Volney Coelho ; Galup-Montoro, Carlos ; Schneider, Márcío Cherem
Author_Institution
Dept. of Electr. Eng., State Univ. of Santa Catarina, Santa Catarina, Brazil
Volume
47
Issue
11
fYear
2000
fDate
11/1/2000 12:00:00 AM
Firstpage
1325
Lastpage
1328
Abstract
In this paper, we propose a very simple bias circuit that allows for maximum output voltage swing of MOSFET cascode stages. The circuit topology is valid for any current density and is technology independent. Starting from the saturation voltage and from the current density of the cascode stage, we determine the aspect ratio of the transistors in the bias circuit in order to maximize the output voltage swing. Experimental results validate the strategy for designing the bias network.
Keywords
MOS analogue integrated circuits; current mirrors; MOS analog integrated circuit; bias circuit; cascode current mirror; circuit topology; current density; output voltage swing; saturation voltage; transistor aspect ratio; Analog integrated circuits; Circuit synthesis; Circuit topology; Current density; Electric resistance; Frequency; MOSFET circuits; Mirrors; Silicon; Voltage;
fLanguage
English
Journal_Title
Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on
Publisher
ieee
ISSN
1057-7130
Type
jour
DOI
10.1109/82.885143
Filename
885143
Link To Document