• DocumentCode
    1408247
  • Title

    Aspects of field emission from silicon diode arrays

  • Author

    Harvey, R.J. ; Lee, R.A. ; Miller, A.J. ; Wigmore, J.K.

  • Author_Institution
    Dept. of Phys., Lancaster Univ., UK
  • Volume
    38
  • Issue
    10
  • fYear
    1991
  • fDate
    10/1/1991 12:00:00 AM
  • Firstpage
    2323
  • Lastpage
    2328
  • Abstract
    The authors studied the field emission of arrays of lithographically fabricated silicon tips both by electrical characterization and by direct imaging of the spatial emission pattern. The authors describe experiments and analyses which support the supposition that the emitting tips are simply those which have the smallest values out of a Poisson distribution of tip radii created by the etching process. Many samples give rise to Fowler-Nordheim plots which consist of two distinct regions with different slopes. A model of this behavior is proposed in terms of a random distribution of tip radii, truncated on the low side by melting or surface reconstruction. The model also explains why so few tips in an array actually contribute
  • Keywords
    electron field emission; elemental semiconductors; etching; silicon; vacuum microelectronics; Fowler-Nordheim plots; Poisson distribution of tip radii; Si tip arrays; direct imaging; electrical characterization; emitting tips; etching process; experiments; model; random distribution of tip radii; semiconductors; spatial emission pattern; Cathodes; Computer aided software engineering; Current density; Dry etching; Field emitter arrays; Lattices; Physics; Pollution measurement; Semiconductor diodes; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.88519
  • Filename
    88519