DocumentCode :
1408247
Title :
Aspects of field emission from silicon diode arrays
Author :
Harvey, R.J. ; Lee, R.A. ; Miller, A.J. ; Wigmore, J.K.
Author_Institution :
Dept. of Phys., Lancaster Univ., UK
Volume :
38
Issue :
10
fYear :
1991
fDate :
10/1/1991 12:00:00 AM
Firstpage :
2323
Lastpage :
2328
Abstract :
The authors studied the field emission of arrays of lithographically fabricated silicon tips both by electrical characterization and by direct imaging of the spatial emission pattern. The authors describe experiments and analyses which support the supposition that the emitting tips are simply those which have the smallest values out of a Poisson distribution of tip radii created by the etching process. Many samples give rise to Fowler-Nordheim plots which consist of two distinct regions with different slopes. A model of this behavior is proposed in terms of a random distribution of tip radii, truncated on the low side by melting or surface reconstruction. The model also explains why so few tips in an array actually contribute
Keywords :
electron field emission; elemental semiconductors; etching; silicon; vacuum microelectronics; Fowler-Nordheim plots; Poisson distribution of tip radii; Si tip arrays; direct imaging; electrical characterization; emitting tips; etching process; experiments; model; random distribution of tip radii; semiconductors; spatial emission pattern; Cathodes; Computer aided software engineering; Current density; Dry etching; Field emitter arrays; Lattices; Physics; Pollution measurement; Semiconductor diodes; Silicon;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.88519
Filename :
88519
Link To Document :
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